| 000 | 01107nam a22001697a 4500 | ||
|---|---|---|---|
| 003 | SGT | ||
| 020 | _a9788126517022 | ||
| 082 | _a530,SZE | ||
| 100 | _aSZE,S.M | ||
| 245 | _aPHYSICS OF SEMICONDUCTOR DEVICES | ||
| 250 | _a3RD | ||
| 260 |
_aNEW DELHI _bWILEY _c2015 |
||
| 300 | _a815 | ||
| 650 | _aPHYSICS, SEMICONDUCTOR DEVICES | ||
| 653 | _aPART I SEMICONDUCTOR PHYSICS PHYSICS AND PROPERTIES OF SEMICONDUCTORS-A REVIEW PART II DEVICE BUILDING BLOCKS P-N JUNCTIONS METAL-SEMICONDUCTOR CONTACTS METAL-INSULATOR-SEMICONDUCTOR CAPACITORS PART III TRANSISTORS BIPOLAR TRANSISTORS MOSFETS JFETS, MESFETS, AND MODFETS PART IV NEGATIVE-RESISTANCE AND POWER DEVICES TUNNEL DEVICES IMPATT DIODES TRANSFERRED-ELECTRON AND REAL-SPACE-TRANSFER DEVICES THYRISTORS AND POWER DEVICES PART V PHOTONIC DEVICES AND SENSORS LEDS AND LASERS PHOTODETECTORS AND SOLAR CELLS SENSORS APPENDIXES A. LIST OF SYMBOLS B. INTERNATIONAL SYSTEM OF UNITS C. UNIT PREFIXES D. GREEK ALPHABET E. PHYSICAL CONSTANTS F. PROPERTIES OF IMPORTANT SEMICONDUCTORS G. PROPERTIES OF SI AND GAAS H. PROPERTIES OF SIO, AND SI3N | ||
| 942 |
_2ddc _cFPS _09 |
||
| 999 |
_c9881 _d9881 |
||