04149nam a22001697a 4500 SGT 9788126516810 537.622,SZE SZE,S.M SEMICONDUCTOR DEVICES: PHYSICS AND TECHNOLOGY 2ND NEW DELHI WILEY INDIA 2013 564 ELECTRICITY & ELECTRONICS CHAPTER 0 1 INTRODUCTION 0.1 SEMICONDUCTOR DEVICES 0.2 SEMICONDUCTOR TECHNOLOGY PART I SEMICONDUCTOR PHYSICS CHAPTER 1 ENERGY BANDS AND CARRIER CONCENTRATION IN THERMAL EQUILIBRIUM 1.1 SEMICONDUCTOR MATERIALS 1.2 BASIC CRYSTAL STRUCTURES 1.3 VALENCE BONDS 1.4 ENERGY BANDS 1.5 INTRINSIC CARRIER CONCENTRATION 1.6 DONORS AND ACCEPTORS CHAPTER 2 CARRIER TRANSPORT PHENOMENA 2.1 CARRIER DRIFT 2.2 CARRIER DIFFUSION 2.3 GENERATION AND RECOMBINATION PROCESSES 2.4 CONTINUITY EQUATION 2.5 THERMIONIC EMISSION PROCESS 2.6 TUNNELING PROCESS 2.7 SPACE-CHARGE EFFECT 2.8 HIGH-FIELD EFFECTS PART II SEMICONDUCTOR DEVICES CHAPTER 3 P-N JUNCTION 3.1 THERMAL EQUILIBRIUM CONDITION 3.2 DEPLETION REGION 3.3 DEPLETION CAPACITANCE 3.4 CURRENT-VOLTAGE CHARACTERISTICS 3.5 CHARGE STORAGE AND TRANSIENT BEHAVIOR 3.6 JUNCTION BREAKDOWN 3.7 HETEROJUNCTION CHAPTER 4 BIPOLAR TRANSISTORS AND RELATED DEVICES 4.1 TRANSISTOR ACTION 4.2 STATIC CHARACTERISTICS OF BIPOLAR TRANSISTORS 4.3 FREQUENCY RESPONSE AND SWITCHING OF BIPOLAR TRANSISTORS 4.4 NONIDEAL EFFECTS 4.5 HETEROJUNCTION BIPOLAR TRANSISTORS 4.6 THYRISTORS AND RELATED POWER DEVICES CHAPTER 5 MOS CAPACITOR AND MOSFET 5.1 IDEAL MOS CAPACITOR 5.2 SIO2-SI MOS CAPACITOR 5.3 CARRIER TRANSPORT IN MOS CAPACITORS 5.4 CHARGE-COUPLED DEVICES (CCD) 5.5 MOSFET FUNDAMENTALS CHAPTER 6 ADVANCED MOSFET AND RELATED DEVICES 6.1 MOSFET SCALING 6.2 CMOS AND BICMOS 6.3 MOSFET ON INSULATOR 6.4 MOS MEMORY STRUCTURES 6.5 POWER MOSFET CHAPTER 7 MESFET AND RELATED DEVICES 7.1 METAL-SEMICONDUCTOR CONTACTS 7.2 MESFET 7.3 MODFET CHAPTER 8 MICROWAVE DIODES; QUANTUM-EFFECT AND HOT-ELECTRON DEVICES 8.1 MICROWAVE FREQUENCY BANDS 8.2 TUNNEL DIODE 8.3 IMPATT DIODE 8.4 TRANSFERRED-ELECTRON DEVICES 8.5 QUANTUM-EFFECT DEVICES 8.6 HOT-ELECTRON DEVICES CHAPTER 9 LIGHT EMITTING DIODES AND LASERS 9.1 RADIATIVE TRANSITIONS AND OPTICAL ABSORPTION 9.2 LIGHT-EMITTING DIODES 9.3 VARIOUS LIGHT-EMITTING DIODES 9.4 SEMICONDUCTOR LASERS CHAPTER 10 PHOTODETECTORS AND SOLAR CELLS 10.1 PHOTODETECTORS 10.2 SOLAR CELLS 10.3 SILICON AND COMPOUND-SEMICONDUCTOR SOLAR CELLS 10.4 THIRD-GENERATION SOLAR CELLS 10.5 OPTICAL CONCENTRATION PART III SEMICONDUCTOR TECHNOLOGY CHAPTER 11 CRYSTAL GROWTH AND EPITAXY 11.1 SILICON CRYSTAL GROWTH FROM THE MELT 11.2 SILICON FLOAT-ZONE PROCESS 11.3 GAAS CRYSTAL-GROWTH TECHNIQUES 11.4 MATERIAL CHARACTERIZATION 11.5 EPITAXIAL-GROWTH TECHNIQUES 11.6 STRUCTURES AND DEFECTS IN EPITAXIAL LAYERS CHAPTER 12 FILM FORMATION 12.1 THERMAL OXIDATION 12.2 CHEMICAL VAPOR DEPOSITION OF DIELECTRICS 12.3 CHEMICAL VAPOR DEPOSITION OF POLYSILICON 12.4 ATOM LAYER DEPOSITION 12.5 METALLIZATION CHAPTER 13 LITHOGRAPHY AND ETCHING 13.1 OPTICAL LITHOGRAPHY 13.2 NEXT-GENERATION LITHOGRAPHIC METHODS 13.3 WET CHEMICAL ETCHING 13.4 DRY ETCHING CHAPTER 14 IMPURITY DOPING 14.1 BASIC DIFFUSION PROCESS 14.2 EXTRINSIC DIFFUSION 14.3 DIFFUSION-RELATED PROCESSES 14.4 RANGE OF IMPLANTED IONS 14.5 IMPLANT DAMAGE AND ANNEALING 14.6 IMPLANTATION-RELATED PROCESSES CHAPTER 15 INTEGRATED DEVICES 15.1 PASSIVE COMPONENTS 15.2 BIPOLAR TECHNOLOGY 15.3 MOSFET TECHNOLOGY 15.4 MESFET TECHNOLOGY 15.5 CHALLENGES FOR NANOELECTRONICS APPENDIX A LIST OF SYMBOLS APPENDIX B INTERNATIONAL SYSTEMS OF UNITS (SI UNITS) APPENDIX C UNIT PREFIXES APPENDIX D GREEK ALPHABET APPENDIX E PHYSICAL CONSTANTS APPENDIX F PROPERTIES OF IMPORTANT ELEMENT AND BINARY COMPOUND SEMICONDUCTORS AT 300 K APPENDIX G PROPERTIES OF SI AND GAAS AT 300 K APPENDIX H DERIVATION OF THE DENSITY OF STATES IN A SEMICONDUCTOR APPENDIX I DERIVATION OF RECOMBINATION RATE FOR INDIRECT RECOMBINATION APPENDIX J CALCULATION OF THE TRANSMISSION COEFFICIENT FOR A SYMMETRIC RESONANT-TUNNELING DIODE APPENDIX K BASIC KINETIC THEORY OF GASES APPENDIX L ANSWERS TO SELECTED PROBLEMS ddc FPS 0 0 ddc 0 0 FS SSSL SSSL REF 2016-06-29 KIRTI PRAKASHAN 619.00 SGTU 0 537.622,SZE PS1198 2016-06-29 00:00:00 2015-10-19 FPS 3151 0 0 ddc 0 1 FS SSSL SSSL REF 2016-06-29 KIRTI PRAKASHAN 619.00 SGTU 537.622,SZE PS1199 2016-06-29 00:00:00 2015-10-19 FPS 3151 0 0 ddc 0 0 FS SSSL SSSL REF 2016-06-29 KIRTI PRAKASHAN 619.00 SGTU 0 537.622,SZE PS1200 2016-06-29 00:00:00 2015-10-19 FPS 3151 9306 9306